Reed-Jones, J, Marsland, J, Ellis, D, Fergus, P and Jones, K (2023) Early vs Late Fusion in Binaural Sound Source Localisation using CNN. In: International Conference on Intelligent Systems and New Applications (ICISNA'23) Proceedings Book . (International Conference on Intelligent Systems and New Applications (ICISNA'23), Liverpool, UK).

Tok, KH, Zhang, J, Brown, J, Ji, Z, Zhang, W and Marsland, J (2023) Characterizing and Modelling RTN under real circuit bias conditions. IEEE Transactions on Electron Devices, 70 (5). pp. 2424-2430. ISSN 0018-9383

Fan, S, Yang, Z, Wang, J and Marsland, J (2022) Shipping accident analysis in restricted waters: Lesson from the Suez Canal blockage in 2021. Ocean Engineering, 266 (5). ISSN 0029-8018

Zhang, JF, Gao, R, Duan, M, Ji, Z, Zhang, WD and Marsland, J (2022) Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics, 11 (19).

Chai, Z, Freitas, P, Zhang, WD, Zhang, JF and Marsland, J (2021) True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors. In: IEEE Explore . (2021 IEEE 14th International Conference on ASIC, 26 October 2021 - 29 October 2021, Kunming, China).

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, J (2021) An integrated method for extracting the statistical distribution of RTN time constants. In: 2021 IEEE 14th International Conference on ASIC (ASICON) . (IEEE 14th International Conference on ASIC (ASICON), 26 October 2021 - 29 October 2021, Kunming, China (Online)).

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Mehedi, M, Tok, KH, Ye, Z, Zhang, JF, Ji, Z, Zhang, WD and Marsland, J (2021) On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude. IEEE Access. ISSN 2169-3536

Brown, J, Zhang, JF, Zhou, B, Mehedi, M, Freitas, P, Marsland, J and Ji, Z (2020) Random‑telegraph‑noise‑enabled true random number generator for hardware security. Scientific Reports, 10. ISSN 2045-2322

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Degraeve, R, Clima, S, Zhang, J, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2020) Stochastic computing based on volatile GeSe ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco. (Accepted)

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J Impact of RTN and Variability on RRAM-Based Neural Network. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China. (Accepted)

Zhang, JF, Manut, AB, Gao, R, Mehedi, M, Ji, Z, Zhang, WD and Marsland, J An assessment of RTN-induced threshold voltage jitter. In: Proceedings of 2019 13th IEEE International Conference on ASIC (ASICON), ChongQing, 2019. . (2019 13th IEEE International Conference on ASIC, 29 Oct - 1 Nov 2019, Chongqing, China). (Accepted)