Items where Author is "Ravsher, T"

Hu, Z, Wang, G, Chai, Z, Zhang, W ORCID: 0000-0003-4600-7382, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G (2024) Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA).

Hu, Z, Zhang, W ORCID: 0000-0003-4600-7382, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Saxena, N ORCID: 0000-0002-2626-1327, Wang, C, Hu, Z, Wang, G, Naqi, M, Zhang, L, Zhang, W, Zheng, C, Garbin, D, Degraeve, R, Clima, S, Ravsher, T and Belmonte, A Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches. IEEE Transactions on Electron Devices. ISSN 0018-9383 (Accepted)