Items where Author is "Ravsher, T"
Article
Hu, Z, Zhang, W
ORCID: 0000-0003-4600-7382, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G
(2022)
New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors.
IEEE Transactions on Electron Devices.
ISSN 0018-9383
Saxena, N
ORCID: 0000-0002-2626-1327, Wang, C, Hu, Z, Wang, G, Naqi, M, Zhang, L, Zhang, W, Zheng, C, Garbin, D, Degraeve, R, Clima, S, Ravsher, T and Belmonte, A
Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches.
IEEE Transactions on Electron Devices.
ISSN 0018-9383
(Accepted)
Conference or Workshop Item
Hu, Z, Wang, G, Chai, Z, Zhang, W
ORCID: 0000-0003-4600-7382, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G
(2024)
Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices.
In:
2024 International Electron Devices Meeting (IEDM)
.
(International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA).
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