Items where Author is "Hao, Y"

Hong, Y, Zheng, X, He, Y, Zhang, H, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, J, Ma, X and Hao, Y (2024) Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga2O3 heterojunction diodes. Materials Science in Semiconductor Processing, 185. ISSN 1369-8001

Hong, Y, Zheng, X, Zhang, H, He, Y, Zhu, T, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, JF, Ma, X and Hao, Y (2024) Fröhlich Scattering Effects on Electron Mobility in β-Ga2O3 Power Devices under High Temperature. Physica Status Solidi (B) Basic Research. ISSN 0370-1972

Zhang, H, Zheng, X, Lin, D, Hong, Y, Zhou, J, Lv, L, Cao, Y, Han, H, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, J, Ma, X and Hao, Y (2024) Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under on-state with High Drain Bias. IEEE Transactions on Electron Devices. pp. 1-5. ISSN 0018-9383

Zhang, H ORCID: 0000-0003-1689-8532, Zheng, X ORCID: 0000-0002-9410-3849, Lin, D, Lv, L, Cao, Y, Hong, Y ORCID: 0000-0002-2067-2168, Zhang, F ORCID: 0000-0002-1092-4368, Wang, X ORCID: 0000-0002-0943-1427, Wang, Y ORCID: 0000-0003-0606-5588, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, J ORCID: 0000-0003-4987-6428, Ma, X and Hao, Y ORCID: 0000-0001-7876-8878 (2024) Study on the single-event burnout mechanism of GaN MMIC power amplifiers. Applied Physics Letters, 124 (8). ISSN 0003-6951

Jiang, M, Wang, B, Hao, Y, Chen, S, Wen, Y and Yang, Z ORCID: 0000-0003-1385-493X (2023) Quantification of CO2 emissions in transportation: An empirical analysis by modal shift from road to waterway transport in Zhejiang, China. Transport Policy, 145. pp. 177-186. ISSN 0967-070X

Nie, X, Zhao, S, Hao, Y, Gu, S, Zhang, Y, Qi, B ORCID: 0000-0002-9425-935X, Xing, Y and Qin, L (2023) Transcriptome analysis reveals key genes involved in the resistance to Cryphonectria parasitica during early disease development in Chinese chestnut. BMC Plant Biology, 23 (1). ISSN 1471-2229

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).