Items where Author is "Hao, Y"
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Article
Wu, Y, Ma, X, Yu, L, Feng, X, Zhao, S, Zhang, W, Zhang, J and Hao, Y (2024) High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. Micromachines, 15 (11). pp. 1-8. ISSN 2072-666X
Hong, Y, Zheng, X, He, Y, Zhang, H, Zhang, W, Zhang, J, Ma, X and Hao, Y (2024) Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga2O3 heterojunction diodes. Materials Science in Semiconductor Processing, 185. ISSN 1369-8001
Hong, Y, Zheng, X, Zhang, H, He, Y, Zhu, T, Zhang, W, Zhang, JF, Ma, X and Hao, Y (2024) Fröhlich Scattering Effects on Electron Mobility in β-Ga2O3 Power Devices under High Temperature. Physica Status Solidi (B) Basic Research. ISSN 0370-1972
Zhang, H, Zheng, X, Lin, D, Hong, Y, Zhou, J, Lv, L, Cao, Y, Han, H, Zhang, W, Zhang, J, Ma, X and Hao, Y (2024) Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under on-state with High Drain Bias. IEEE Transactions on Electron Devices. pp. 1-5. ISSN 0018-9383
Zhang, H, Zheng, X, Lin, D, Lv, L, Cao, Y, Hong, Y, Zhang, F, Wang, X, Wang, Y, Zhang, W, Zhang, J, Ma, X and Hao, Y (2024) Study on the single-event burnout mechanism of GaN MMIC power amplifiers. Applied Physics Letters, 124 (8). ISSN 0003-6951
Jiang, M, Wang, B, Hao, Y, Chen, S, Wen, Y and Yang, Z (2023) Quantification of CO2 emissions in transportation: An empirical analysis by modal shift from road to waterway transport in Zhejiang, China. Transport Policy, 145. pp. 177-186. ISSN 0967-070X
Nie, X, Zhao, S, Hao, Y, Gu, S, Zhang, Y, Qi, B, Xing, Y and Qin, L (2023) Transcriptome analysis reveals key genes involved in the resistance to Cryphonectria parasitica during early disease development in Chinese chestnut. BMC Plant Biology, 23 (1). ISSN 1471-2229
Conference or Workshop Item
Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).