Items where Author is "Ma, J"

Article

Ran, H, Ma, J, Chen, X, Sun, Y, Gkantou, M and McCrum, D (2024) Local Stability of Laser-Welded Stainless-Steel T-Section Stub Columns. Journal of Structural Engineering, 150 (7). ISSN 0733-9445

Phelps, NH, Singleton, RK, Zhou, B, Heap, RA, Mishra, A, Bennett, JE, Paciorek, CJ, Lhoste, VPF, Carrillo-Larco, RM, Stevens, GA, Rodriguez-Martinez, A, Bixby, H, Bentham, J, Di Cesare, M, Danaei, G, Rayner, AW, Barradas-Pires, A, Cowan, MJ, Savin, S, Riley, LM et al (2024) Worldwide trends in underweight and obesity from 1990 to 2022: a pooled analysis of 3663 population-representative studies with 222 million children, adolescents, and adults. The Lancet, 403 (10431). pp. 1027-1050. ISSN 0140-6736

Mishra, A, Zhou, B, Rodriguez-Martinez, A, Bixby, H, Singleton, RK, Carrillo-Larco, RM, Sheffer, KE, Paciorek, CJ, Bennett, JE, Lhoste, V, Iurilli, MLC, Di Cesare, M, Bentham, J, Phelps, NH, Sophiea, MK, Stevens, GA, Danaei, G, Cowan, MJ, Savin, S, Riley, LM et al (2023) Diminishing benefits of urban living for children and adolescents’ growth and development. Nature, 615. pp. 874-883. ISSN 0028-0836

Essiet, IA, Lander, NJ, Salmon, J, Duncan, MJ, Eyre, ELJ, Ma, J and Barnett, LM (2021) A systematic review of tools designed for teacher proxy-report of children’s physical literacy or constituting elements. International Journal of Behavioral Nutrition and Physical Activity, 18 (1). p. 131. ISSN 1479-5868

Gao, R, Ma, J, Lin, X, Zhang, X, En, Y, Lu, G, Huang, Y, Ji, Z, Yang, H, Zhang, WD and Zhang, JF (2021) A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society, 9. pp. 539-544. ISSN 2168-6734

Li, Z, Yuan, S, Ma, J, Shen, J and Batako, ADL (2021) Study on the surface formation mechanism in scratching test with different ultrasonic vibration forms. Journal of Materials Processing Technology. ISSN 0924-0136

Li, Z, Yuan, S, Ma, J, Shen, J and Batako, ADL (2021) Cutting force and specific energy for rotary ultrasonic drilling based on kinematics analysis of vibration effectiveness. Chinese Journal of Aeronautics. ISSN 1000-9361

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Conference or Workshop Item

Zhang, WD, Chai, Z, Ma, J and Zhang, JF (2018) Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China).

Zhang, JF, Ma, J, Zhang, WD and Ji, Z (2017) DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: 2017 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Zhang, W, Chai, Z, Ma, J, Zhang, J and Ji, Z (2016) Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25 October 2016 - 28 October 2016, Hangzhou, China.

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J, Franco, J, Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).