Tools
Tools
Wu, Y, Ma, X, Yu, L, Feng, X, Zhao, S, Zhang, W, Zhang, J and Hao, Y (2024) High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. Micromachines, 15 (11). pp. 1-8. ISSN 2072-666X
|
Text
High Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate.pdf - Published Version Available under License Creative Commons Attribution. Download (1MB) | Preview |
Abstract
In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, the output characteristics show that the ratio of on-resistance (RON) only reaches 1.55 when the working temperature increases from 25 °C to 150 °C. This increase in RON is caused by a reduction in optical phonon scattering-limited mobility (μOP) in the AlGaN material. Moreover, the device also displays great high-performance stability in that the variation of the threshold voltage (ΔVTH) is only 0.1 V, and the off-state leakage current (ID,off-state) is simply increased from 2.87 × 10−5 to 1.85 × 10−4 mA/mm, under the operating temperature variation from 25 °C to 200 °C. It is found that the two trap states are induced at high temperatures, and the trap state densities (DT) of 4.09 × 1012~5.95 × 1012 and 7.58 × 1012~1.53 × 1013 cm−2 eV−1 are located at ET in a range of 0.46~0.48 eV and 0.57~0.61 eV, respectively, which lead to the slight performance degeneration of AlGaN HEMT. Therefore, this work provides experimental and theoretical evidence of AlGaN HEMT for high-temperature applications, pushing the development of ultra-wide gap semiconductors greatly.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | AlGaN channel high electron mobility transistor; carrier mobility; high temperature; trap states; 1007 Nanotechnology |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Engineering |
| Publisher: | MDPI AG |
| SWORD Depositor: | A Symplectic |
| Date Deposited: | 06 Jan 2025 15:50 |
| Last Modified: | 06 Jan 2025 16:00 |
| DOI or ID number: | 10.3390/mi15111343 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/25189 |
 |
View Item |