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Chai, Z, Zhang, W and Zhang, JF (2024) Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) , 15 (2023). pp. 1-4. (IEEE 15th International Conference on ASIC, 24-27 October 2023, Nanjing, China).

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Du, Y, Shao, W, Chai, Z, Zhao, H, Diao, Q, Gao, Y, Yuan, X, Wang, Q, Li, T, Zhang, WD, Zhang, JF and Min, T (2022) Synaptic 1/f noise injection for overfitting suppression in hardware neural networks. Neuromorphic Computing and Engineering, 2.

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Joksas, D, Freitas, P, Chai, Z, Ng, WH, Buckwell, M, Li, C, Zhang, WD, Xia, QF, Kenyon, AJ and Mehonic, A (2020) Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks. Nature Communications, 11 (4273). ISSN 2041-1723

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Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G (2019) Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: 2019 IEEE International Electron Devices Meeting (IEDM) . (IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco).

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposium on VLSI Technology . (2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan).

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Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

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Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

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Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

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Hu, Z, Wang, G, Chai, Z, Zhang, W, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA). (Accepted)