Items where Author is "Chai, Z"

Article

Yuan, X, Chai, Z, Zhou, X, Luo, Y, He, Y, Jian, J, Yue, X, Zhang, JF, Zhang, W and Min, T (2024) Hardware Estimation for the Eigenvectors of Stochastic Matrices using Magnetic Tunnel Junctions. IEEE Electron Device Letters, 46 (3). pp. 500-503. ISSN 0741-3106

Jian, J, Yuan, X, Chai, Z, Zhou, X, Luo, Y, He, Y, Yue, X, Zhang, JF, Zhang, W and Min, T (2024) Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions. IEEE Electron Device Letters, 46 (2). pp. 171-174. ISSN 0741-3106

Yuan, X, Jian, J, Chai, Z, Wei, H, Zhou, X, Wen, Y, Liu, Y, Yan, W, He, Y, Zhang, JF, Zhang, W and Min, T (2024) Arbitrary Modulation of Average Dwell Time in Discrete-Time Markov Chains based on Tunneling Magnetoresistance Effect. IEEE Electron Device Letters. ISSN 0741-3106

Yuan, X, Jian, J, Chai, Z, An, S, Gao, Y, Zhou, X, Zhang, JF, Zhang, W and Min, T (2023) Markov Chain Signal Generation based on Single Magnetic Tunnel Junction. IEEE Electron Device Letters. p. 1. ISSN 0741-3106

Hu, Z, Zhang, W, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Du, Y, Shao, W, Chai, Z, Zhao, H, Diao, Q, Gao, Y, Yuan, X, Wang, Q, Li, T, Zhang, WD, Zhang, JF and Min, T (2022) Synaptic 1/f noise injection for overfitting suppression in hardware neural networks. Neuromorphic Computing and Engineering, 2.

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Xue, F, He, X, Wang, Z, Retamal, JRD, Chai, Z, Lingling, J, Chenhui, Z, Fang, H, Chai, Y, Zhang, WD, Alshareef, H, Ji, Z, Li, L-J, He, J-H and Zhang, X (2021) Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Advanced Materials, 33 (21). ISSN 0935-9648

Joksas, D, Freitas, P, Chai, Z, Ng, WH, Buckwell, M, Li, C, Zhang, WD, Xia, QF, Kenyon, AJ and Mehonic, A (2020) Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks. Nature Communications, 11 (4273). ISSN 2041-1723

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Degraeve, R, Clima, S, Zhang, J, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2020) Stochastic computing based on volatile GeSe ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Conference or Workshop Item

Hu, Z, Wang, G, Chai, Z, Zhang, W, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G (2024) Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA).

Hu, Z, Chai, Z, Zhang, W and Zhang, JF (2024) Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device. In: 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings . pp. 1-4. (2024 IEEE 17th International Conference on Solid-State & Integrated Circuit, 22nd Oct - 25th Oct 2024, Zhuhai, China).

Chai, Z, Zhang, W and Zhang, JF (2024) Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) , 15 (2023). pp. 1-4. (IEEE 15th International Conference on ASIC, 24-27 October 2023, Nanjing, China).

Chai, Z, Freitas, P, Zhang, WD, Zhang, JF and Marsland, J (2021) True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors. In: IEEE Explore . (2021 IEEE 14th International Conference on ASIC, 26 October 2021 - 29 October 2021, Kunming, China).

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J (2020) Impact of RTN and Variability on RRAM-Based Neural Network. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China).

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G (2019) Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: 2019 IEEE International Electron Devices Meeting (IEDM) . (IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco).

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposium on VLSI Technology . (2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan).

Zhang, WD, Chai, Z, Ma, J and Zhang, JF (2018) Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Zhang, W, Chai, Z, Ma, J, Zhang, J and Ji, Z (2016) Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25 October 2016 - 28 October 2016, Hangzhou, China.

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Thesis

Chai, Z (2017) Characterisation of Novel Resistive Switching Memory Devices. Doctoral thesis, Liverpool John Moores University.