Items where Author is "Chai, Z"

Article

Yuan, X, Chai, Z ORCID: 0000-0003-3446-7138, Zhou, X ORCID: 0000-0002-2218-0618, Luo, Y, He, Y, Jian, J, Yue, X, Zhang, JF ORCID: 0000-0003-4987-6428, Zhang, W ORCID: 0000-0003-4600-7382 and Min, T (2024) Hardware Estimation for the Eigenvectors of Stochastic Matrices using Magnetic Tunnel Junctions. IEEE Electron Device Letters, 46 (3). pp. 500-503. ISSN 0741-3106

Jian, J, Yuan, X, Chai, Z ORCID: 0000-0003-3446-7138, Zhou, X ORCID: 0000-0002-2218-0618, Luo, Y, He, Y, Yue, X, Zhang, JF ORCID: 0000-0003-4987-6428, Zhang, W ORCID: 0000-0003-4600-7382 and Min, T (2024) Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions. IEEE Electron Device Letters, 46 (2). pp. 171-174. ISSN 0741-3106

Yuan, X, Jian, J, Chai, Z, Wei, H, Zhou, X, Wen, Y, Liu, Y, Yan, W, He, Y, Zhang, JF, Zhang, W ORCID: 0000-0003-4600-7382 and Min, T (2024) Arbitrary Modulation of Average Dwell Time in Discrete-Time Markov Chains based on Tunneling Magnetoresistance Effect. IEEE Electron Device Letters. ISSN 0741-3106

Yuan, X, Jian, J, Chai, Z ORCID: 0000-0003-3446-7138, An, S, Gao, Y, Zhou, X ORCID: 0000-0002-2218-0618, Zhang, JF ORCID: 0000-0003-4987-6428, Zhang, W ORCID: 0000-0003-4600-7382 and Min, T (2023) Markov Chain Signal Generation based on Single Magnetic Tunnel Junction. IEEE Electron Device Letters. p. 1. ISSN 0741-3106

Hu, Z, Zhang, W ORCID: 0000-0003-4600-7382, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Du, Y, Shao, W, Chai, Z ORCID: 0000-0003-3446-7138, Zhao, H, Diao, Q, Gao, Y, Yuan, X, Wang, Q, Li, T ORCID: 0000-0002-3337-6202, Zhang, WD ORCID: 0000-0003-4600-7382, Zhang, JF and Min, T (2022) Synaptic 1/f noise injection for overfitting suppression in hardware neural networks. Neuromorphic Computing and Engineering, 2.

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF ORCID: 0000-0003-4987-6428, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Xue, F, He, X, Wang, Z, Retamal, JRD, Chai, Z, Lingling, J, Chenhui, Z, Fang, H, Chai, Y, Zhang, WD, Alshareef, H, Ji, Z, Li, L-J, He, J-H and Zhang, X (2021) Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Advanced Materials, 33 (21). ISSN 0935-9648

Joksas, D, Freitas, P, Chai, Z, Ng, WH, Buckwell, M, Li, C, Zhang, WD, Xia, QF, Kenyon, AJ and Mehonic, A (2020) Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks. Nature Communications, 11 (4273). ISSN 2041-1723

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Degraeve, R, Clima, S, Zhang, J, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2020) Stochastic computing based on volatile GeSe ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Conference or Workshop Item

Hu, Z, Wang, G, Chai, Z, Zhang, W ORCID: 0000-0003-4600-7382, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G (2024) Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA).

Hu, Z, Chai, Z, Zhang, W ORCID: 0000-0003-4600-7382 and Zhang, JF (2024) Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device. In: 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings . pp. 1-4. (2024 IEEE 17th International Conference on Solid-State & Integrated Circuit, 22nd Oct - 25th Oct 2024, Zhuhai, China).

Chai, Z, Zhang, W ORCID: 0000-0003-4600-7382 and Zhang, JF (2024) Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) , 15 (2023). pp. 1-4. (IEEE 15th International Conference on ASIC, 24-27 October 2023, Nanjing, China).

Chai, Z, Freitas, P, Zhang, WD, Zhang, JF and Marsland, J (2021) True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors. In: IEEE Explore . (2021 IEEE 14th International Conference on ASIC, 26 October 2021 - 29 October 2021, Kunming, China).

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J (2020) Impact of RTN and Variability on RRAM-Based Neural Network. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China).

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G (2019) Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: 2019 IEEE International Electron Devices Meeting (IEDM) . (IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco).

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposium on VLSI Technology . (2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan).

Zhang, WD, Chai, Z, Ma, J and Zhang, JF (2018) Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Zhang, W, Chai, Z, Ma, J, Zhang, J and Ji, Z (2016) Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25 October 2016 - 28 October 2016, Hangzhou, China.

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Thesis

Chai, Z (2017) Characterisation of Novel Resistive Switching Memory Devices. Doctoral thesis, Liverpool John Moores University.