Jiang, Z, Jiang, C, Liu, J, Chen, X, Shen, L and Gao, R (2024) Application of a novel cylindrical bonnet tool polishing approach to finishing of bearing ring internal surface. Journal of Manufacturing Processes, 117. pp. 14-23. ISSN 1526-6125

Brown, J, Tok, KH, Gao, R, Ji, Z, Zhang, W, Marsland, JS, Chiarella, T, Franco, J, Kaczer, B, Linten, D and Zhang, JF (2023) A Pragmatic Model to Predict Future Device Aging. IEEE Access, 11. pp. 127725-127736. ISSN 2169-3536

Zhang, JF, Gao, R, Duan, M, Ji, Z, Zhang, WD and Marsland, J (2022) Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics, 11 (19).

Yang, L, Wang, W, Sun, P, Huang, S, Gao, R, Kong, D, Ru, W, Wronski, T and Zhang, G (2021) Extrinsic factors, endocrine mechanisms, and behavioral indicators of migratory restlessness in wintering whooper swans (Cygnus cygnus). Scientific Reports, 11 (1). ISSN 2045-2322

Gao, R, Ma, J, Lin, X, Zhang, X, En, Y, Lu, G, Huang, Y, Ji, Z, Yang, H, Zhang, WD and Zhang, JF (2021) A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society, 9. pp. 539-544. ISSN 2168-6734

Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734

Gao, R, Mehedi, M, Chen, H, Wang, X, Zhang, JF, Lin, XL, He, ZY, Chen, YQ, Lei, DY, Huang, Y, En, YF, Ji, Z and Wang, R (2020) A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS) . (2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA).

Zhang, JF, Gao, R, Ji, Z and Zhang, WD (2020) Challenge and solution for characterizing NBTI-generated defects in nanoscale devices. In: 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) . (International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2 - 5 July 2019, Hangzhou, China).

Zhang, JF, Manut, AB, Gao, R, Mehedi, M, Ji, Z, Zhang, WD and Marsland, J (2019) An assessment of RTN-induced threshold voltage jitter. In: 2019 IEEE 13th International Conference on ASIC (ASICON) . (2019 13th IEEE International Conference on ASIC, 29 Oct - 1 Nov 2019, Chongqing, China).

Manut, A, Gao, R, Zhang, JF, Ji, Z, Mehedi, M, Vigar, D, Asenov, A and Kaczer, B (2019) Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd. IEEE Transactions on Electron Devices, 66 (3). pp. 1482-1488. ISSN 0018-9383

Brown, J, Gao, R, Ji, Z, Chen, J, Wu, J, Zhang, JF, Zhou, B, Shi, Q, Crawford, J and Zhang, WD (2018) A low-power and high-speed True Random Number Generator using generated RTN. In: 2018 IEEE Symposium on VLSI Technology . (2018 Symposia on VLSI Technology and Circuits, 18 June 2018 - 22 June 2018, Hawaii US).

Gao, R (2018) Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs. Doctoral thesis, Liverpool John Moores University.

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

Ji, Z, Gao, R and Zhang, JF (2018) Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits. In: Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Ji, Z, Gao, R, Manut, AB, Zhang, JF, Franco, J, Hatta, SWM, Zhang, W, Kaczer, B, Linten, D and Groeseneken, G (2017) NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling. IEEE Transactions on Electron Devices, 64 (10). pp. 4011-4017. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Ji, Z, Linten, D, Boschke, R, Hellings, G, Chen, SH, Alian, A, Zhou, D, Mols, Y, Ivanov, T, Franco, J, Kaczer, B, Zhang, X, Gao, R, Zhang, JF, Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).

Ji, Z, Zhang, JF, Zhang, WD, Gao, R and Zhang, X (2015) An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel. IEEE Transactions on Electron Devices, 62 (11). pp. 3633-3639. ISSN 0018-9383

Gao, R, Ji, Z, Zhang, JF, Zhang, WD, Hatta, SFWM, Niblock, J, Bachmayr, P, Stauffer, L, Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).