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Items where Author is "Ji, Z"

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Number of items: 60.

Article

Mehedi, M, Tok, KH, Ye, Z, Zhang, JF, Ji, Z, Zhang, WD and Marsland, J (2021) On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude. IEEE Access. ISSN 2169-3536

Brown, J, Zhang, JF, Zhou, B, Mehedi, M, Freitas, P, Marsland, J and Ji, Z (2020) Random‑telegraph‑noise‑enabled true random number generator for hardware security. Scientific Reports, 10. ISSN 2045-2322

Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734

Zhan, X, Shen, C, Ji, Z, Chen, J, Fang, H, Guo, F and Zhang, JF (2019) A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 40 (5). pp. 674-677. ISSN 0741-3106

Manut, A, Gao, R, Zhang, JF, Ji, Z, Mehedi, M, Vigar, D, Asenov, A and Kaczer, B (2019) Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd. IEEE Transactions on Electron Devices, 66 (3). pp. 1482-1488. ISSN 0018-9383

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Zhang, JF, Ji, Z and Zhang, WEI (2017) As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction. Microelectronics Reliability. ISSN 0026-2714

Ji, Z, Gao, R, Manut, AB, Zhang, JF, Franco, J, Hatta, SWM, Zhang, W, Kaczer, B, Linten, D and Groeseneken, G (2017) NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling. IEEE Transactions on Electron Devices, 64 (10). pp. 4011-4017. ISSN 0018-9383

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Vigar, D, Asenov, A, Gerrer, L, Chandra, V, Aitken, R and Kaczer, B (2016) Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging. IEEE Transactions on Electron Devices, 63 (9). pp. 3642-3648. ISSN 0018-9383

Manut, AB, Zhang, JF, Duan, M, Ji, Z, Zhang, WD, kaczer, B, Schram, T, Horiguchi,, N and Groeseneken, G (2015) Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation. IEEE Journal of the Electron Devices Society. ISSN 2168-6734

Ji, Z, Zhang, JF, Zhang, WD, Gao, R and Zhang, X (2015) An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel. IEEE Transactions on Electron Devices, 62 (11). pp. 3633-3639. ISSN 0018-9383

Gao, R, Ji, Z, Zhang, JF, Zhang, WD, Hatta, SFWM, Niblock, J, Bachmayr, P, Stauffer, L, Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Groeseneken, G and Asenov, A (2014) Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (9). pp. 3081-3089. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Gao, R, Ma, J, Lin, X, Zhang, X, En, Y, Lu, G, Huang, Y, Ji, Z, Yang, H, Zhang, WD and Zhang, JF A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society. ISSN 2168-6734 (Accepted)

Du, Y, Jing, L, Fang, H, Chen, H, Cai, Y, Wang, R, Zhang, JF and Ji, Z Exploring the impact of random telegraph noise-induced accuracy loss in Resistive RAM-based deep neural network. IEEE Transactions on Electron Devices, 67. ISSN 0018-9383 (Accepted)

Xue, F, He, X, Wang, Z, Retamal, JRD, Chai, Z, Lingling, J, Chenhui, Z, Fang, H, Chai, Y, Zhang, WD, Alshareef, H, Ji, Z, Li, L-J, He, J-H and Zhang, X Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Advanced Materials. ISSN 0935-9648 (Accepted)

Koh, SS, Zhou, B, Fang, H, Yang, P, Yang, Z, Yang, Q, Guan, L and Ji, Z Real-time Deep Reinforcement Learning based Vehicle Routing and Navigation. Applied Soft Computing Journal. ISSN 1568-4946 (Accepted)

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, J An assessment of the statistical distribution of Random Telegraph Noise Time Constants. IEEE Access. ISSN 2169-3536 (Accepted)

Conference or Workshop Item

Gao, R, Mehedi, M, Chen, H, Wang, X, Zhang, JF, Lin, XL, He, ZY, Chen, YQ, Lei, DY, Huang, Y, En, YF, Ji, Z and Wang, R (2020) A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS) . (2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA).

Zhang, JF, Ji, Z, Duan, M, Zhang, WD and Zhao, C (2019) Voltage step stress: a technique for reducing test time of device ageing. In: 2019 International Conference on IC Design and Technology (ICICDT) . (THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY, 17 - 19 June 2019, Suzhou, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations. In: Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Ji, Z, Gao, R and Zhang, JF (2018) Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits. In: Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Kang, J, Yu, Z, Wu, L, Fang, Y, Wang, Z, Cai, Y, Ji, Z, Zhang, JF, Wang, R, Yang, Y and Huang, R (2017) Time-Dependent Variability in RRAM-based Analog Neuromorphic System for Pattern Recognition. In: Technical Digest of the IEEE International Electron Devices Meeting (IEDM), . (2017 International Electron Devices Meeting (IEDM),, 2nd-6th December 2017, San Fransisco, USA).

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Zhang, W, Chai, Z, Ma, J, Zhang, J and Ji, Z (2016) Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25 October 2016 - 28 October 2016, Hangzhou, China.

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2016) DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY. In: IEEE Explore . (2016 IEEE China Semiconductor Technology International Conference, 13 March 2016 - 14 March 2016, Shanghai, China).

Zhang, JF, Duan, M, Manut, A, Ji, Z, Zhang, W, Asenov, A, Gerrer, L, Reid, D, Razaidi, H, Vigar, D, Chandra, V, Aitken, R, Kaczer, B and Groeseneken, G (2015) Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM) . 20.4.1-20.4.4. (IEEE International Electron Devices Meeting (IEDM), 7th - 9th December 2015, Washington, DC, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2015) NBTI prediction and its induced time dependent variation. In: Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON) . pp. 1-4. (2015 11th IEEE International Conference on ASIC (ASICON), 03 November 2015 - 06 November 2015, Chengdu, China).

Ji, Z, Linten, D, Boschke, R, Hellings, G, Chen, SH, Alian, A, Zhou, D, Mols, Y, Ivanov, T, Franco, J, Kaczer, B, Zhang, X, Gao, R, Zhang, JF, Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).

Ji, Z (2015) Origins and implications of increased channel hot carrier variability in nFinFETs. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3B.5.1-3B.5.6. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23rd April 2015, Monterey, CA).

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

Ji, Z (2015) SrTiO3 for sub-20 nm DRAM technology nodes — characterization and modeling. In: Microelectronic Engineering , 147 (C). pp. 126-129. (IEEE Semiconductor Interfaces Specialist Conference, 1st - 5th December 2014, San Diego, CA).

Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).

Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J, Franco, J, Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).

Ji, Z, Zhang, JF, Zhang, WEI and Zhang, X (2014) A single device based Voltage Step Stress (VSS) Technique for fast reliability screening. In: Reliability Physics Symposium, 2014 IEEE International . GD.2.1-GD.2.4. (Reliability Physics Symposium, 2014, 1st - 5th June 2014, Waikoloa, HI).

Zhang, JF, Duan, M, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Thean, G, Groseneken, G and Asenov, A (2014) Time-dependent variation: A new defect-based prediction methodology. In: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers . (IEEE Symposium of VLSI technology, 9th - 12th June 2014, Honolulu).

Zhang, JF, Ji, Z and Zhang, WD The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions. In: IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits, 04 July 2017 - 07 July 2017, Chengdu. (Accepted)

Zhang, JF, Gao, R, Ji, Z and Zhang, WD Challenge and solution for characterizing NBTI-generated defects in nanoscale devices. In: Proceedings of The 26th International Symposium on the Physical nand Failure Analysis of Integrated Circuits . (International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2 - 5 July 2019, Hangzhou, China). (Accepted)

Zhang, JF, Ma, J, Zhang, WD and Ji, Z DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China. (Accepted)

Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD Defect loss and its physical processes. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming. (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, W Hot carrier aging of nano-meter devices. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25th - 28th October 2016, Hangzhou, China). (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, WD Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.. (Accepted)

Manut, AB, Zhang, JF, Ji, Z and Zhang, WD INTERACTION BETWEEN RANDOM TELEGRAPH NOISE AND HOT CARRIER AGEING. In: IEEE Explore . (IEEE China Semiconductor Technology International Conference (CSTIC), 18-19 March 2019, Shanghai, China). (Accepted)

Duan, M, Zhang, JF, Ji, Z and Zhang, WD TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: Proc. IEEE China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China). (Accepted)

Zhang, JF, Manut, AB, Gao, R, Mehedi, M, Ji, Z, Zhang, WD and Marsland, J An assessment of RTN-induced threshold voltage jitter. In: Proceedings of 2019 13th IEEE International Conference on ASIC (ASICON), ChongQing, 2019. . (2019 13th IEEE International Conference on ASIC, 29 Oct - 1 Nov 2019, Chongqing, China). (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, WD A framework for defects in PBTI and hot carrier ageing. In: Proceeging of IEEE 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 2018 . (14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 31st October - 3rd November 2018, Qingdao, China). (Accepted)

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, J An integrated method for extracting the statistical distribution of RTN time constants. In: IEEE 14th International Conference on ASIC (ASICON), 26 October 2021 - 29 October 2021, Kunming, China (Online). (Accepted)

Brown, J, Gao, R, Ji, Z, Chen, J, Wu, J, Zhang, JF, Zhou, B, Shi, Q, Crawford, J and Zhang, WD A low-power and high-speed True Random Number Generator using generated RTN. In: 2018 Symposia on VLSI Technology and Circuits, 18 June 2018 - 22 June 2018, Hawaii US. (Accepted)

Thesis

Ji, Z (2010) Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs. Doctoral thesis, Liverpool John Moores University.

This list was generated on Wed Dec 1 06:39:06 2021 UTC.