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Sandles, L, D'eugenio, F, Maiolino, R, Looser, TJ, Arribas, S, Baker, WM, Bonaventura, N, Bunker, AJ, Cameron, AJ, Carniani, S, Charlot, S, Chevallard, J, Curti, M, Curtis-Lake, E, De Graaff, A, Eisenstein, DJ, Hainline, K, Ji, Z, Johnson, BD, Jones, GC et al, Kumari, N, Nelson, E, Perna, M, Rawle, T, Rix, HW, Robertson, B, Del Pino, BR, Scholtz, J, Shivaei, I, Smit, R, Sun, F, Tacchella, S, Übler, H, Williams, CC, Willott, C and Witstok, J (2024) JADES: Balmer decrement measurements at redshifts 4 <z< 7. Astronomy and Astrophysics, 691. pp. 1-7. ISSN 0004-6361

Bunker, AJ, Cameron, AJ, Curtis-Lake, E, Jakobsen, P, Carniani, S, Curti, M, Witstok, J, Maiolino, R, D'Eugenio, F, Looser, TJ, Willott, C, Bonaventura, N, Hainline, K, Übler, H, Willmer, CNA, Saxena, A, Smit, R, Alberts, S, Arribas, S, Baker, WM et al, Baum, S, Bhatawdekar, R, Bowler, RAA, Boyett, K, Charlot, S, Chen, Z, Chevallard, J, Circosta, C, Decoursey, C, De Graaff, A, Egami, E, Eisenstein, DJ, Endsley, R, Ferruit, P, Giardino, G, Hausen, R, Helton, JM, Hviding, RE, Ji, Z, Johnson, BD, Jones, GC, Kumari, N, Laseter, I, Lützgendorf, N, Maseda, MV, Nelson, E, Parlanti, E, Perna, M, Rauscher, BJ, Rawle, T, Rix, HW, Rieke, M, Robertson, B, Rodríguez Del Pino, B, Sandles, L, Scholtz, J, Sharpe, K, Skarbinski, M, Stark, DP, Sun, F, Tacchella, S, Topping, MW, Villanueva, NC, Wallace, IEB, Williams, CC and Woodrum, C (2024) JADES NIRSpec initial data release for the Hubble Ultra Deep Field: Redshifts and line fluxes of distant galaxies from the deepest JWST Cycle 1 NIRSpec multi-object spectroscopy. Astronomy and Astrophysics, 690. pp. 1-32. ISSN 0004-6361

Hu, Y, Wu, M, Yuan, M, Wen, Y, Ren, P, Ye, S, Liu, F, Zhou, B, Fang, H, Wang, R, Ji, Z and Huang, R (2024) Accurate prediction of dielectric properties and bandgaps in materials with a machine learning approach. Applied Physics Letters, 125. ISSN 0003-6951

D’Eugenio, F, Maiolino, R, Carniani, S, Chevallard, J, Curtis-Lake, E, Witstok, J, Charlot, S, Baker, WM, Arribas, S, Boyett, K, Bunker, AJ, Curti, M, Eisenstein, DJ, Hainline, K, Ji, Z, Johnson, BD, Kumari, N, Looser, TJ, Nakajima, K, Nelson, E et al, Rieke, M, Robertson, B, Scholtz, J, Smit, R, Sun, F, Venturi, G, Tacchella, S, Übler, H, Willmer, CNA and Willott, C (2024) JADES: Carbon enrichment 350 Myr after the Big Bang. Astronomy and Astrophysics, 689. pp. 1-16. ISSN 0004-6361

Robertson, B, Johnson, BD, Tacchella, S, Eisenstein, DJ, Hainline, K, Arribas, S, Baker, WM, Bunker, AJ, Carniani, S, Cargile, PA, Carreira, C, Charlot, S, Chevallard, J, Curti, M, Curtis-Lake, E, D’Eugenio, F, Egami, E, Hausen, R, Helton, JM, Jakobsen, P et al, Ji, Z, Jones, GC, Maiolino, R, Maseda, MV, Nelson, E, Pérez-González, PG, Puskás, D, Rieke, M, Smit, R, Sun, F, Übler, H, Whitler, L, Williams, CC, Willmer, CNA, Willott, C and Witstok, J (2024) Earliest Galaxies in the JADES Origins Field: Luminosity Function and Cosmic Star Formation Rate Density 300 Myr after the Big Bang. Astrophysical Journal, 970 (1). ISSN 0004-637X

Maiolino, R, Übler, H, Perna, M, Scholtz, J, D’Eugenio, F, Witten, C, Laporte, N, Witstok, J, Carniani, S, Tacchella, S, Baker, WM, Arribas, S, Nakajima, K, Eisenstein, DJ, Bunker, AJ, Charlot, S, Cresci, G, Curti, M, Curtis-Lake, E, de Graaff, A et al, Egami, E, Ji, Z, Johnson, BD, Kumari, N, Looser, TJ, Maseda, M, Nelson, E, Robertson, B, Del Pino, BR, Sandles, L, Simmonds, C, Smit, R, Sun, F, Venturi, G, Williams, CC and Willmer, CNA (2024) JADES Possible Population III signatures at z = 10.6 in the halo of GN-z11. Astronomy & Astrophysics, 687. ISSN 0004-6361

Curti, M, Maiolino, R, Curtis-Lake, E, Chevallard, J, Carniani, S, D'Eugenio, F, Looser, TJ, Scholtz, J, Charlot, S, Cameron, A, Übler, H, Witstok, J, Boyett, K, Laseter, I, Sandles, L, Arribas, S, Bunker, A, Giardino, G, Maseda, MV, Rawle, T et al, Del Pino, BR, Smit, R, Willott, CJ, Eisenstein, DJ, Hausen, R, Johnson, B, Rieke, M, Robertson, B, Tacchella, S, Williams, CC, Willmer, C, Baker, WM, Bhatawdekar, R, Egami, E, Helton, JM, Ji, Z, Kumari, N, Perna, M, Shivaei, I and Sun, F (2024) JADES: Insights into the low-mass end of the mass-metallicity-SFR relation at 3 < z < 10 from deep JWST/NIRSpec spectroscopy*. Astronomy and Astrophysics, 684. ISSN 0004-6361

Jones, GC, Bunker, AJ, Saxena, A, Witstok, J, Stark, DP, Arribas, S, Baker, WM, Bhatawdekar, R, Bowler, R, Boyett, K, Cameron, AJ, Carniani, S, Charlot, S, Chevallard, J, Curti, M, Curtis-Lake, E, Eisenstein, DJ, Hainline, K, Hausen, R, Ji, Z et al, Johnson, BD, Kumari, N, Looser, TJ, Maiolino, R, Maseda, MV, Parlanti, E, Rix, HW, Robertson, BE, Sandles, L, Scholtz, J, Smit, R, Tacchella, S, Übler, H, Williams, CC and Willott, C (2024) JADES: The emergence and evolution of Ly α emission and constraints on the intergalactic medium neutral fraction. Astronomy and Astrophysics, 683. ISSN 0004-6361

Hainline, KN, Johnson, BD, Robertson, B, Tacchella, S, Helton, JM, Sun, F, Eisenstein, DJ, Simmonds, C, Topping, MW, Whitler, L, Willmer, CNA, Rieke, M, Suess, KA, Hviding, RE, Cameron, AJ, Alberts, S, Baker, WM, Baum, S, Bhatawdekar, R, Bonaventura, N et al, Boyett, K, Bunker, AJ, Carniani, S, Charlot, S, Chevallard, J, Chen, Z, Curti, M, Curtis-Lake, E, D’Eugenio, F, Egami, E, Endsley, R, Hausen, R, Ji, Z, Looser, TJ, Lyu, J, Maiolino, R, Nelson, E, Puskás, D, Rawle, T, Sandles, L, Saxena, A, Smit, R, Stark, DP, Williams, CC, Willott, C and Witstok, J (2024) The Cosmos in Its Infancy: JADES Galaxy Candidates at z >8 in GOODS-S and GOODS-N. Astrophysical Journal, 964 (1). p. 71. ISSN 0004-637X

Looser, TJ, D'Eugenio, F, Maiolino, R, Witstok, J, Sandles, L, Curtis-Lake, E, Chevallard, J, Tacchella, S, Johnson, BD, Baker, WM, Suess, KA, Carniani, S, Ferruit, P, Arribas, S, Bonaventura, N, Bunker, AJ, Cameron, AJ, Charlot, S, Curti, M, de Graaff, A et al, Maseda, MV, Rawle, T, Rix, H-W, Del Pino, BR, Smit, R, Übler, H, Willott, C, Alberts, S, Egami, E, Eisenstein, DJ, Endsley, R, Hausen, R, Rieke, M, Robertson, B, Shivaei, I, Williams, CC, Boyett, K, Chen, Z, Ji, Z, Jones, GC, Kumari, N, Nelson, E, Perna, M, Saxena, A and Scholtz, J (2024) A recently quenched galaxy 700 million years after the Big Bang. Nature. pp. 53-57. ISSN 0028-0836

Laseter, IH, Maseda, MV, Curti, M, Maiolino, R, D'Eugenio, F, Cameron, AJ, Looser, TJ, Arribas, S, Baker, WM, Bhatawdekar, R, Boyett, K, Bunker, AJ, Carniani, S, Charlot, S, Chevallard, J, Curtis-Lake, E, Egami, E, Eisenstein, DJ, Hainline, K, Hausen, R et al, Ji, Z, Kumari, N, Perna, M, Rawle, T, Rix, HW, Robertson, B, Rodríguez Del Pino, B, Sandles, L, Scholtz, J, Smit, R, Tacchella, S, Übler, H, Williams, CC, Willott, C and Witstok, J (2024) JADES: Detecting [OIII] λ 4363 emitters and testing strong line calibrations in the high- z Universe with ultra-deep JWST/NIRSpec spectroscopy up to z ~ 9.5. Astronomy and Astrophysics, 681. ISSN 0004-6361

Witstok, J, Smit, R, Saxena, A, Jones, GC, Helton, JM, Sun, F, Maiolino, R, Kumari, N, Stark, DP, Bunker, AJ, Arribas, S, Baker, WM, Bhatawdekar, R, Boyett, K, Cameron, AJ, Carniani, S, Charlot, S, Chevallard, J, Curti, M, Curtis-Lake, E et al, Eisenstein, DJ, Endsley, R, Hainline, K, Ji, Z, Johnson, BD, Looser, TJ, Nelson, E, Perna, M, Rix, HW, Robertson, BE, Sandles, L, Scholtz, J, Simmonds, C, Tacchella, S, Übler, H, Williams, CC, Willmer, CNA and Willott, C (2024) Inside the bubble: exploring the environments of reionisation-era Lyman- α emitting galaxies with JADES and FRESCO*. Astronomy and Astrophysics, 682. ISSN 0004-6361

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Rieke, MJ, Robertson, B, Tacchella, S, Hainline, K, Johnson, BD, Hausen, R, Ji, Z, Willmer, CNA, Eisenstein, DJ, Puskás, D, Alberts, S, Arribas, S, Baker, WM, Baum, S, Bhatawdekar, R, Bonaventura, N, Boyett, K, Bunker, AJ, Cameron, AJ, Carniani, S et al, Charlot, S, Chevallard, J, Chen, Z, Curti, M, Curtis-Lake, E, Danhaive, AL, DeCoursey, C, Dressler, A, Egami, E, Endsley, R, Helton, JM, Hviding, RE, Kumari, N, Looser, TJ, Lyu, J, Maiolino, R, Maseda, MV, Nelson, EJ, Rieke, G, Rix, HW, Sandles, L, Saxena, A, Sharpe, K, Shivaei, I, Skarbinski, M, Smit, R, Stark, DP, Stone, M, Suess, KA, Sun, F, Topping, M, Übler, H, Villanueva, NC, Wallace, IEB, Williams, CC, Willott, C, Whitler, L, Witstok, J and Woodrum, C (2023) JADES Initial Data Release for the Hubble Ultra Deep Field: Revealing the Faint Infrared Sky with Deep JWST NIRCam Imaging. Astrophysical Journal, Supplement Series, 269 (1). ISSN 0067-0049

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Saxena, A, Robertson, BE, Bunker, AJ, Endsley, R, Cameron, AJ, Charlot, S, Simmonds, C, Tacchella, S, Witstok, J, Willott, C, Carniani, S, Curtis-Lake, E, Ferruit, P, Jakobsen, P, Arribas, S, Chevallard, J, Curti, M, D'Eugenio, F, De Graaff, A, Jones, GC et al, Looser, TJ, Maseda, MV, Rawle, T, Rix, HW, Del Pino, BR, Smit, R, Ubler, H, Eisenstein, DJ, Hainline, K, Hausen, R, Johnson, BD, Rieke, M, Williams, CC, Willmer, CNA, Baker, WM, Bhatawdekar, R, Bowler, R, Boyett, K, Chen, Z, Egami, E, Ji, Z, Kumari, N, Nelson, E, Perna, M, Sandles, L, Scholtz, J and Shivaei, I (2023) JADES: Discovery of extremely high equivalent width Lyman- α emission from a faint galaxy within an ionized bubble at z = 7.3. Astronomy and Astrophysics, 678. ISSN 0004-6361

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Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Vigar, D, Asenov, A, Gerrer, L, Chandra, V, Aitken, R and Kaczer, B (2016) Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging. IEEE Transactions on Electron Devices, 63 (9). pp. 3642-3648. ISSN 0018-9383

Manut, AB, Zhang, JF, Duan, M, Ji, Z, Zhang, WD, kaczer, B, Schram, T, Horiguchi,, N and Groeseneken, G (2015) Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation. IEEE Journal of the Electron Devices Society. ISSN 2168-6734

Ji, Z, Zhang, JF, Zhang, WD, Gao, R and Zhang, X (2015) An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel. IEEE Transactions on Electron Devices, 62 (11). pp. 3633-3639. ISSN 0018-9383

Gao, R, Ji, Z, Zhang, JF, Zhang, WD, Hatta, SFWM, Niblock, J, Bachmayr, P, Stauffer, L, Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Groeseneken, G and Asenov, A (2014) Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (9). pp. 3081-3089. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Conference or Workshop Item

Wu, J, Ren, P, Zhang, C, Xiao, Y, Xue, Y, Li, Y, Wang, X, Zhang, L, Liu, J, Zhang, J, Wang, R, Ji, Z and Huang, R (2024) Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling. In: 2023 International Electron Devices Meeting (IEDM) . pp. 1-4. (69th Annual IEEE International Electron Devices Meeting (IEDM), 9th - 13th December 2023, San Francisco, USA).

Qiao, Z, Li, J, Liu, C, Guo, L, Ren, P, Ye, S, Zhou, B, Zhang, J, Ji, Z, Liu, J, Wang, R and Huang, R (2022) Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 . pp. 333-335. (6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March 2022 - 9th March 2022, Oita, Japan).

Liu, C, Guo, L, Qiao, Z, Li, J, Ren, P, Ye, S, Zhou, B, Zhang, J, Ji, Z, Wang, R and Huang, R (2022) Realization of NOR logic using Cu/ZnO/Pt CBRAM. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM . pp. 132-134. (2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March - 9th March 2022, Oita, Japan).

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, J (2021) An integrated method for extracting the statistical distribution of RTN time constants. In: 2021 IEEE 14th International Conference on ASIC (ASICON) . (IEEE 14th International Conference on ASIC (ASICON), 26 October 2021 - 29 October 2021, Kunming, China (Online)).

Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD (2020) Defect loss and its physical processes. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming).

Duan, M, Zhang, JF, Ji, Z and Zhang, WD (2020) TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: 2020 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China).

Gao, R, Mehedi, M, Chen, H, Wang, X, Zhang, JF, Lin, XL, He, ZY, Chen, YQ, Lei, DY, Huang, Y, En, YF, Ji, Z and Wang, R (2020) A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS) . (2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA).

Zhang, JF, Gao, R, Ji, Z and Zhang, WD (2020) Challenge and solution for characterizing NBTI-generated defects in nanoscale devices. In: 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) . (International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2 - 5 July 2019, Hangzhou, China).

Zhang, JF, Manut, AB, Gao, R, Mehedi, M, Ji, Z, Zhang, WD and Marsland, J (2019) An assessment of RTN-induced threshold voltage jitter. In: 2019 IEEE 13th International Conference on ASIC (ASICON) . (2019 13th IEEE International Conference on ASIC, 29 Oct - 1 Nov 2019, Chongqing, China).

Zhang, JF, Ji, Z, Duan, M, Zhang, WD and Zhao, C (2019) Voltage step stress: a technique for reducing test time of device ageing. In: 2019 International Conference on IC Design and Technology (ICICDT) . (THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY, 17 - 19 June 2019, Suzhou, China).

Manut, AB, Zhang, JF, Ji, Z and Zhang, WD (2019) Interaction between random telegraph noise and hot carrier ageing. In: 2019 China Semiconductor Technology International Conference (CSTIC) . (IEEE China Semiconductor Technology International Conference (CSTIC), 18-19 March 2019, Shanghai, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) A framework for defects in PBTI and hot carrier ageing. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 31st October - 3rd November 2018, Qingdao, China).

Brown, J, Gao, R, Ji, Z, Chen, J, Wu, J, Zhang, JF, Zhou, B, Shi, Q, Crawford, J and Zhang, WD (2018) A low-power and high-speed True Random Number Generator using generated RTN. In: 2018 IEEE Symposium on VLSI Technology . (2018 Symposia on VLSI Technology and Circuits, 18 June 2018 - 22 June 2018, Hawaii US).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations. In: Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Ji, Z, Gao, R and Zhang, JF (2018) Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits. In: Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Kang, J, Yu, Z, Wu, L, Fang, Y, Wang, Z, Cai, Y, Ji, Z, Zhang, JF, Wang, R, Yang, Y and Huang, R (2017) Time-Dependent Variability in RRAM-based Analog Neuromorphic System for Pattern Recognition. In: Technical Digest of the IEEE International Electron Devices Meeting (IEDM), . (2017 International Electron Devices Meeting (IEDM),, 2nd-6th December 2017, San Fransisco, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2017) Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: 2017 IEEE 12th International Conference on ASIC (ASICON) . (IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.).

Zhang, JF, Ji, Z and Zhang, WD (2017) The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions. In: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) . (IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits, 04 July 2017 - 07 July 2017, Chengdu).

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

Zhang, JF, Ma, J, Zhang, WD and Ji, Z (2017) DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: 2017 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, W (2016) Hot carrier aging of nano-meter devices. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25th - 28th October 2016, Hangzhou, China).

Zhang, W, Chai, Z, Ma, J, Zhang, J and Ji, Z (2016) Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25 October 2016 - 28 October 2016, Hangzhou, China.

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2016) DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY. In: IEEE Explore . (2016 IEEE China Semiconductor Technology International Conference, 13 March 2016 - 14 March 2016, Shanghai, China).

Zhang, JF, Duan, M, Manut, A, Ji, Z, Zhang, W, Asenov, A, Gerrer, L, Reid, D, Razaidi, H, Vigar, D, Chandra, V, Aitken, R, Kaczer, B and Groeseneken, G (2015) Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM) . 20.4.1-20.4.4. (IEEE International Electron Devices Meeting (IEDM), 7th - 9th December 2015, Washington, DC, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2015) NBTI prediction and its induced time dependent variation. In: Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON) . pp. 1-4. (2015 11th IEEE International Conference on ASIC (ASICON), 03 November 2015 - 06 November 2015, Chengdu, China).

Ji, Z, Linten, D, Boschke, R, Hellings, G, Chen, SH, Alian, A, Zhou, D, Mols, Y, Ivanov, T, Franco, J, Kaczer, B, Zhang, X, Gao, R, Zhang, JF, Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).

Ji, Z (2015) Origins and implications of increased channel hot carrier variability in nFinFETs. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3B.5.1-3B.5.6. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23rd April 2015, Monterey, CA).

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

Ji, Z (2015) SrTiO3 for sub-20 nm DRAM technology nodes — characterization and modeling. In: Microelectronic Engineering , 147 (C). pp. 126-129. (IEEE Semiconductor Interfaces Specialist Conference, 1st - 5th December 2014, San Diego, CA).

Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).

Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J, Franco, J, Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).

Ji, Z, Zhang, JF, Zhang, WEI and Zhang, X (2014) A single device based Voltage Step Stress (VSS) Technique for fast reliability screening. In: Reliability Physics Symposium, 2014 IEEE International . GD.2.1-GD.2.4. (Reliability Physics Symposium, 2014, 1st - 5th June 2014, Waikoloa, HI).

Zhang, JF, Duan, M, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Thean, G, Groseneken, G and Asenov, A (2014) Time-dependent variation: A new defect-based prediction methodology. In: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers . (IEEE Symposium of VLSI technology, 9th - 12th June 2014, Honolulu).

Thesis

Ji, Z (2010) Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs. Doctoral thesis, Liverpool John Moores University.