Article

Brown, J, Tok, KH, Gao, R, Ji, Z, Zhang, W, Marsland, JS, Chiarella, T, Franco, J, Kaczer, B, Linten, D and Zhang, JF (2023) A Pragmatic Model to Predict Future Device Aging. IEEE Access, 11. pp. 127725-127736. ISSN 2169-3536

Yuan, X, Jian, J, Chai, Z, An, S, Gao, Y, Zhou, X, Zhang, JF, Zhang, W and Min, T (2023) Markov Chain Signal Generation based on Single Magnetic Tunnel Junction. IEEE Electron Device Letters. p. 1. ISSN 0741-3106

Tok, KH, Zhang, JF, Brown, J, Ye, Z, Ji, Z, Zhang, WD and Marsland, JS (2022) AC RTN: Testing, Modeling, and Prediction. IEEE Transactions on Electron Devices. pp. 1-7. ISSN 0018-9383

Du, Y, Shao, W, Chai, Z, Zhao, H, Diao, Q, Gao, Y, Yuan, X, Wang, Q, Li, T, Zhang, WD, Zhang, JF and Min, T (2022) Synaptic 1/f noise injection for overfitting suppression in hardware neural networks. Neuromorphic Computing and Engineering, 2.

Liu, X, Ren, P, Chen, H, Ji, Z, Liu, J, Wang, R, Zhang, JF and Huang, R (2022) Equiprobability-based Local Response Surface Method for High-Sigma Yield Estimation with Both High Accuracy and Efficiency. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 42 (4). pp. 1346-1350. ISSN 0278-0070

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106

Tok, KH, Mehedi, M, Zhang, JF, Brown, J, Ye, Z, Ji, Z, Zhang, W, Marsland, JS, Asenov, A and Georgiev, V (2022) An Integral Methodology for Predicting Long Term RTN. IEEE Transactions on Electron Devices. ISSN 0018-9383

Zhang, JF, Gao, R, Duan, M, Ji, Z, Zhang, WD and Marsland, J (2022) Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics, 11 (19).

Liu, C, Ren, P, Zhou, B, Zhang, JF, Fang, H and Ji, Z (2021) Investigation on the implementation of stateful minority logic for future in-memory computing. IEEE Access, 9. pp. 168648-168655. ISSN 2169-3536

Tu, Z, Xue, Y, Ren, P, Hao, F, Wang, R, Li, M, Zhang, JF, Ji, Z and Huang, R (2021) A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Gao, R, Ma, J, Lin, X, Zhang, X, En, Y, Lu, G, Huang, Y, Ji, Z, Yang, H, Zhang, WD and Zhang, JF (2021) A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society, 9. pp. 539-544. ISSN 2168-6734

Mehedi, M, Tok, KH, Ye, Z, Zhang, JF, Ji, Z, Zhang, WD and Marsland, J (2021) On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude. IEEE Access. ISSN 2169-3536

Brown, J, Zhang, JF, Zhou, B, Mehedi, M, Freitas, P, Marsland, J and Ji, Z (2020) Random‑telegraph‑noise‑enabled true random number generator for hardware security. Scientific Reports, 10. ISSN 2045-2322

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, JS (2020) An assessment of the statistical distribution of Random Telegraph Noise Time Constants. IEEE Access, 8. pp. 182273-182282. ISSN 2169-3536

Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734

Du, Y, Jing, L, Fang, H, Chen, H, Cai, Y, Wang, R, Zhang, JF and Ji, Z (2020) Exploring the impact of random telegraph noise-induced accuracy loss in Resistive RAM-based deep neural network. IEEE Transactions on Electron Devices, 67 (8). pp. 3335-3340. ISSN 0018-9383

Zhao, T, Zhao, C, Zhang, JF, Mitrovic, IZ, Lim, EG, Yang, L, Song, T and Zhao, C (2020) Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation. Journal of Alloys and Compounds, 829. ISSN 0925-8388

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Zhan, X, Shen, C, Ji, Z, Chen, J, Fang, H, Guo, F and Zhang, JF (2019) A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 40 (5). pp. 674-677. ISSN 0741-3106

Manut, A, Gao, R, Zhang, JF, Ji, Z, Mehedi, M, Vigar, D, Asenov, A and Kaczer, B (2019) Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd. IEEE Transactions on Electron Devices, 66 (3). pp. 1482-1488. ISSN 0018-9383

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Zhang, JF, Ji, Z and Zhang, WEI (2017) As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction. Microelectronics Reliability. ISSN 0026-2714

Ji, Z, Gao, R, Manut, AB, Zhang, JF, Franco, J, Hatta, SWM, Zhang, W, Kaczer, B, Linten, D and Groeseneken, G (2017) NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling. IEEE Transactions on Electron Devices, 64 (10). pp. 4011-4017. ISSN 0018-9383

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J and Chalker, PR (2017) Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping. Applied Physics Letters, 111 (9). ISSN 0003-6951

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Potter, RJ, Guo, Y, Gibbon, JT, Dhanak, VR, Zhang, W, Zhang, JF, Robertson, J, Hall, S and Chalker, PR (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). ISSN 0003-6951

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Zhao, X, Zhang, JF, Liu, S, Zhao, C, Wang, C, Ren, X and Yang, Q (2016) Investigation on grain refinement mechanism of Ni-based coating with LaAlO3 by first-principles. Materials and Design, 110. pp. 644-652. ISSN 0264-1275

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Vigar, D, Asenov, A, Gerrer, L, Chandra, V, Aitken, R and Kaczer, B (2016) Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging. IEEE Transactions on Electron Devices, 63 (9). pp. 3642-3648. ISSN 0018-9383

Manut, AB, Zhang, JF, Duan, M, Ji, Z, Zhang, WD, kaczer, B, Schram, T, Horiguchi,, N and Groeseneken, G (2015) Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation. IEEE Journal of the Electron Devices Society. ISSN 2168-6734

Ji, Z, Zhang, JF, Zhang, WD, Gao, R and Zhang, X (2015) An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel. IEEE Transactions on Electron Devices, 62 (11). pp. 3633-3639. ISSN 0018-9383

Gao, R, Ji, Z, Zhang, JF, Zhang, WD, Hatta, SFWM, Niblock, J, Bachmayr, P, Stauffer, L, Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Groeseneken, G and Asenov, A (2014) Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (9). pp. 3081-3089. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Conference or Workshop Item

Chai, Z, Zhang, W and Zhang, JF (2024) Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) , 15 (2023). pp. 1-4. (IEEE 15th International Conference on ASIC, 24-27 October 2023, Nanjing, China).

Tok, KH, Zhang, JF, Brown, J, Zhigang, J and Zhang, WD (2023) Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) . pp. 1-4. (2023 IEEE 15th International Conference on ASIC (ASICON 2023), 24-27 October 2023, Nanjing, China).

Chai, Z, Freitas, P, Zhang, WD, Zhang, JF and Marsland, J (2021) True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors. In: IEEE Explore . (2021 IEEE 14th International Conference on ASIC, 26 October 2021 - 29 October 2021, Kunming, China).

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, J (2021) An integrated method for extracting the statistical distribution of RTN time constants. In: 2021 IEEE 14th International Conference on ASIC (ASICON) . (IEEE 14th International Conference on ASIC (ASICON), 26 October 2021 - 29 October 2021, Kunming, China (Online)).

Gao, R, Mehedi, M, Chen, H, Wang, X, Zhang, JF, Lin, XL, He, ZY, Chen, YQ, Lei, DY, Huang, Y, En, YF, Ji, Z and Wang, R (2020) A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS) . (2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA).

Zhang, JF, Ji, Z, Duan, M, Zhang, WD and Zhao, C (2019) Voltage step stress: a technique for reducing test time of device ageing. In: 2019 International Conference on IC Design and Technology (ICICDT) . (THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY, 17 - 19 June 2019, Suzhou, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations. In: Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Ji, Z, Gao, R and Zhang, JF (2018) Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits. In: Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Kang, J, Yu, Z, Wu, L, Fang, Y, Wang, Z, Cai, Y, Ji, Z, Zhang, JF, Wang, R, Yang, Y and Huang, R (2017) Time-Dependent Variability in RRAM-based Analog Neuromorphic System for Pattern Recognition. In: Technical Digest of the IEEE International Electron Devices Meeting (IEDM), . (2017 International Electron Devices Meeting (IEDM),, 2nd-6th December 2017, San Fransisco, USA).

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2016) DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY. In: IEEE Explore . (2016 IEEE China Semiconductor Technology International Conference, 13 March 2016 - 14 March 2016, Shanghai, China).

Zhang, JF, Duan, M, Manut, A, Ji, Z, Zhang, W, Asenov, A, Gerrer, L, Reid, D, Razaidi, H, Vigar, D, Chandra, V, Aitken, R, Kaczer, B and Groeseneken, G (2015) Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM) . 20.4.1-20.4.4. (IEEE International Electron Devices Meeting (IEDM), 7th - 9th December 2015, Washington, DC, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2015) NBTI prediction and its induced time dependent variation. In: Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON) . pp. 1-4. (2015 11th IEEE International Conference on ASIC (ASICON), 03 November 2015 - 06 November 2015, Chengdu, China).

Ji, Z, Linten, D, Boschke, R, Hellings, G, Chen, SH, Alian, A, Zhou, D, Mols, Y, Ivanov, T, Franco, J, Kaczer, B, Zhang, X, Gao, R, Zhang, JF, Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).

Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J, Franco, J, Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).

Ji, Z, Zhang, JF, Zhang, WEI and Zhang, X (2014) A single device based Voltage Step Stress (VSS) Technique for fast reliability screening. In: Reliability Physics Symposium, 2014 IEEE International . GD.2.1-GD.2.4. (Reliability Physics Symposium, 2014, 1st - 5th June 2014, Waikoloa, HI).

Zhang, JF, Duan, M, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Thean, G, Groseneken, G and Asenov, A (2014) Time-dependent variation: A new defect-based prediction methodology. In: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers . (IEEE Symposium of VLSI technology, 9th - 12th June 2014, Honolulu).

Zhang, WD, Chai, Z, Ma, J and Zhang, JF Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China. (Accepted)

Zhang, JF, Ji, Z and Zhang, WD The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions. In: IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits, 04 July 2017 - 07 July 2017, Chengdu. (Accepted)

Zhang, JF, Gao, R, Ji, Z and Zhang, WD Challenge and solution for characterizing NBTI-generated defects in nanoscale devices. In: Proceedings of The 26th International Symposium on the Physical nand Failure Analysis of Integrated Circuits . (International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2 - 5 July 2019, Hangzhou, China). (Accepted)

Zhang, JF, Ma, J, Zhang, WD and Ji, Z DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China. (Accepted)

Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD Defect loss and its physical processes. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming. (Accepted)

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco. (Accepted)

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, W Hot carrier aging of nano-meter devices. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25th - 28th October 2016, Hangzhou, China). (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, WD Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.. (Accepted)

Manut, AB, Zhang, JF, Ji, Z and Zhang, WD INTERACTION BETWEEN RANDOM TELEGRAPH NOISE AND HOT CARRIER AGEING. In: IEEE Explore . (IEEE China Semiconductor Technology International Conference (CSTIC), 18-19 March 2019, Shanghai, China). (Accepted)

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J Impact of RTN and Variability on RRAM-Based Neural Network. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China. (Accepted)

Duan, M, Zhang, JF, Ji, Z and Zhang, WD TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: Proc. IEEE China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China). (Accepted)

Zhang, JF, Manut, AB, Gao, R, Mehedi, M, Ji, Z, Zhang, WD and Marsland, J An assessment of RTN-induced threshold voltage jitter. In: Proceedings of 2019 13th IEEE International Conference on ASIC (ASICON), ChongQing, 2019. . (2019 13th IEEE International Conference on ASIC, 29 Oct - 1 Nov 2019, Chongqing, China). (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, WD A framework for defects in PBTI and hot carrier ageing. In: Proceeging of IEEE 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 2018 . (14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 31st October - 3rd November 2018, Qingdao, China). (Accepted)

Brown, J, Gao, R, Ji, Z, Chen, J, Wu, J, Zhang, JF, Zhou, B, Shi, Q, Crawford, J and Zhang, WD A low-power and high-speed True Random Number Generator using generated RTN. In: 2018 Symposia on VLSI Technology and Circuits, 18 June 2018 - 22 June 2018, Hawaii US. (Accepted)