Article

Tok, KH, Zhang, JF, Brown, J, Ye, Z, Ji, Z, Zhang, WD and Marsland, JS (2022) AC RTN: Testing, Modeling, and Prediction. IEEE Transactions on Electron Devices. pp. 1-7. ISSN 0018-9383

Du, Y, Shao, W, Chai, Z, Zhao, H, Diao, Q, Gao, Y, Yuan, X, Wang, Q, Li, T, Zhang, WD, Zhang, JF and Min, T (2022) Synaptic 1/f noise injection for overfitting suppression in hardware neural networks. Neuromorphic Computing and Engineering, 2.

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106

Zhang, JF, Gao, R, Duan, M, Ji, Z, Zhang, WD and Marsland, J (2022) Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics, 11 (19).

Pereira, M, Deuermeier, J, Zhang, WD, Freitas, P, Barquinha, P, Martins, R, Fortunato, E and Kiazadeh, A (2022) Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks. APL Materials, 10. ISSN 2166-532X

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Gao, R, Ma, J, Lin, X, Zhang, X, En, Y, Lu, G, Huang, Y, Ji, Z, Yang, H, Zhang, WD and Zhang, JF (2021) A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society, 9. pp. 539-544. ISSN 2168-6734

Xue, F, He, X, Wang, Z, Retamal, JRD, Chai, Z, Lingling, J, Chenhui, Z, Fang, H, Chai, Y, Zhang, WD, Alshareef, H, Ji, Z, Li, L-J, He, J-H and Zhang, X (2021) Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Advanced Materials, 33 (21). ISSN 0935-9648

Mehedi, M, Tok, KH, Ye, Z, Zhang, JF, Ji, Z, Zhang, WD and Marsland, J (2021) On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude. IEEE Access. ISSN 2169-3536

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, JS (2020) An assessment of the statistical distribution of Random Telegraph Noise Time Constants. IEEE Access, 8. pp. 182273-182282. ISSN 2169-3536

Joksas, D, Freitas, P, Chai, Z, Ng, WH, Buckwell, M, Li, C, Zhang, WD, Xia, QF, Kenyon, AJ and Mehonic, A (2020) Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks. Nature Communications, 11 (4273). ISSN 2041-1723

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Degraeve, R, Clima, S, Zhang, J, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2020) Stochastic computing based on volatile GeSe ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734

Duffy, S, Benbakhti, B, Zhang, WD, Ahmeda, K, Kalna, K, Boucherta, M, Mattalah, M, Chahdi, HO, Bourzgui, N-E and Soltani, A (2020) A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 67 (5). pp. 1924-1930. ISSN 0018-9383

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Guo, Y, Li, H, Zhang, WD and Robertson, J (2019) Structural changes during the switching transition of Chalcogenide Selector devices. Applied Physics Letters, 115 (16). ISSN 0003-6951

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A et al, Li, H, Hou, TH, Hudec, B, Akinwande, D, Ge, R, Ambrogio, S, Roldan, JB, Miranda, E, Suñe, J, Pey, KL, Wu, X, Raghavan, N, Wu, E, Lu, WD, Navarro, G, Zhang, WD, Wu, H, Li, R, Holleitner, A, Wurstbauer, U, Lemme, MC, Liu, M, Long, S, Liu, Q, Lv, H, Padovani, A, Pavan, P, Valov, I, Jing, X, Han, T, Zhu, K, Chen, S, Hui, F and Shi, Y (2018) Recommended Methods to Study Resistive Switching Devices. Advanced Electronic Materials. ISSN 2199-160X

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

Duffy, SJ, Benbakhti, B, Kalna, K, Boucherta, M, Zhang, WD, Bourzgui, N and Soltani, A (2018) Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access. ISSN 2169-3536

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Ahmeda, K, Ubochi, B, Benbakhti, B, Duffy, SJ, Soltani, A, Zhang, WD and Kalna, K (2017) Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures. IEEE Access, 5. pp. 20946-20952. ISSN 2169-3536

Benbakhti, B, Duffy, SJ, Mattalah, M, Zhang, WD, Bouchilaoun, M, Boucherta, M, Kalna, K, Bourzgui, N, Maher, H and Soltani, A (2017) Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate. ECS Journal of Solid State Science and Technology, 6 (11). ISSN 2162-8769

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J and Chalker, PR (2017) Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping. Applied Physics Letters, 111 (9). ISSN 0003-6951

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Vigar, D, Asenov, A, Gerrer, L, Chandra, V, Aitken, R and Kaczer, B (2016) Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging. IEEE Transactions on Electron Devices, 63 (9). pp. 3642-3648. ISSN 0018-9383

Manut, AB, Zhang, JF, Duan, M, Ji, Z, Zhang, WD, kaczer, B, Schram, T, Horiguchi,, N and Groeseneken, G (2015) Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation. IEEE Journal of the Electron Devices Society. ISSN 2168-6734

Ji, Z, Zhang, JF, Zhang, WD, Gao, R and Zhang, X (2015) An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel. IEEE Transactions on Electron Devices, 62 (11). pp. 3633-3639. ISSN 0018-9383

Gao, R, Ji, Z, Zhang, JF, Zhang, WD, Hatta, SFWM, Niblock, J, Bachmayr, P, Stauffer, L, Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Groeseneken, G and Asenov, A (2014) Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (9). pp. 3081-3089. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Conference or Workshop Item

Tok, KH, Zhang, JF, Brown, J, Zhigang, J and Zhang, WD (2023) Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) . pp. 1-4. (2023 IEEE 15th International Conference on ASIC (ASICON 2023), 24-27 October 2023, Nanjing, China).

Chai, Z, Freitas, P, Zhang, WD, Zhang, JF and Marsland, J (2021) True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors. In: IEEE Explore . (2021 IEEE 14th International Conference on ASIC, 26 October 2021 - 29 October 2021, Kunming, China).

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, J (2021) An integrated method for extracting the statistical distribution of RTN time constants. In: 2021 IEEE 14th International Conference on ASIC (ASICON) . (IEEE 14th International Conference on ASIC (ASICON), 26 October 2021 - 29 October 2021, Kunming, China (Online)).

Zhang, JF, Ji, Z, Duan, M, Zhang, WD and Zhao, C (2019) Voltage step stress: a technique for reducing test time of device ageing. In: 2019 International Conference on IC Design and Technology (ICICDT) . (THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY, 17 - 19 June 2019, Suzhou, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations. In: Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Ahmeda, K, Ubochi, B, Kalna, K, Benbakhti, B, Duffy, SJ, Zhang, WD and Soltani, A (2017) Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices. In: Proceedings of the European Microwave Integrated Circuits COnference . pp. 37-40. (European Microwave Week 2017, 08 October 2017 - 13 October 2017, Nuremberg, Germany).

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Simoen, E, Zhang, JF, Ji, Z, Gao, R, Groeseneken, G and Jurczak, M (2016) RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism. In: Digest of Technical Papers - Symposium on VLSI Technology (2016). (IEEE 2016 Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Honolulu).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2016) DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY. In: IEEE Explore . (2016 IEEE China Semiconductor Technology International Conference, 13 March 2016 - 14 March 2016, Shanghai, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2015) NBTI prediction and its induced time dependent variation. In: Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON) . pp. 1-4. (2015 11th IEEE International Conference on ASIC (ASICON), 03 November 2015 - 06 November 2015, Chengdu, China).

Ji, Z, Linten, D, Boschke, R, Hellings, G, Chen, SH, Alian, A, Zhou, D, Mols, Y, Ivanov, T, Franco, J, Kaczer, B, Zhang, X, Gao, R, Zhang, JF, Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Franco, J, Mitard, J, Witters, L, Collaert, N and Groeseneken, G (2015) AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T34-T35. (2015 SYMPOSIUM ON VLSI TECHNOLOGY, 15th - 19th June 2015, Kyoto, Japan).

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J, Franco, J, Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).

Zhang, JF, Duan, M, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Thean, G, Groseneken, G and Asenov, A (2014) Time-dependent variation: A new defect-based prediction methodology. In: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers . (IEEE Symposium of VLSI technology, 9th - 12th June 2014, Honolulu).

Zhang, WD, Chai, Z, Ma, J and Zhang, JF Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China. (Accepted)

Zhang, JF, Ji, Z and Zhang, WD The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions. In: IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits, 04 July 2017 - 07 July 2017, Chengdu. (Accepted)

Zhang, JF, Gao, R, Ji, Z and Zhang, WD Challenge and solution for characterizing NBTI-generated defects in nanoscale devices. In: Proceedings of The 26th International Symposium on the Physical nand Failure Analysis of Integrated Circuits . (International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2 - 5 July 2019, Hangzhou, China). (Accepted)

Zhang, JF, Ma, J, Zhang, WD and Ji, Z DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China. (Accepted)

Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD Defect loss and its physical processes. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming. (Accepted)

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco. (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, WD Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.. (Accepted)

Manut, AB, Zhang, JF, Ji, Z and Zhang, WD INTERACTION BETWEEN RANDOM TELEGRAPH NOISE AND HOT CARRIER AGEING. In: IEEE Explore . (IEEE China Semiconductor Technology International Conference (CSTIC), 18-19 March 2019, Shanghai, China). (Accepted)

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J Impact of RTN and Variability on RRAM-Based Neural Network. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China. (Accepted)

Duffy, SJ, Benbakhti, B, Zhang, WD, Kalna, K, Ahmeda, K, Boucherta, M, Bourzgui, N, Maher, H and Soltani, A A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs. In: European Microwave Week 2018, 23 - 28 September 2018, Madrid, Spain. (Accepted)

Duan, M, Zhang, JF, Ji, Z and Zhang, WD TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: Proc. IEEE China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China). (Accepted)

Zhang, JF, Manut, AB, Gao, R, Mehedi, M, Ji, Z, Zhang, WD and Marsland, J An assessment of RTN-induced threshold voltage jitter. In: Proceedings of 2019 13th IEEE International Conference on ASIC (ASICON), ChongQing, 2019. . (2019 13th IEEE International Conference on ASIC, 29 Oct - 1 Nov 2019, Chongqing, China). (Accepted)

Zhang, JF, Duan, M, Ji, Z and Zhang, WD A framework for defects in PBTI and hot carrier ageing. In: Proceeging of IEEE 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 2018 . (14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 31st October - 3rd November 2018, Qingdao, China). (Accepted)

Brown, J, Gao, R, Ji, Z, Chen, J, Wu, J, Zhang, JF, Zhou, B, Shi, Q, Crawford, J and Zhang, WD A low-power and high-speed True Random Number Generator using generated RTN. In: 2018 Symposia on VLSI Technology and Circuits, 18 June 2018 - 22 June 2018, Hawaii US. (Accepted)