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Tu, Z, Xue, Y, Ren, P, Hao, F, Wang, R, Li, M, Zhang, JF, Ji, Z and Huang, R (2021) A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Gao, R, Ma, J, Lin, X, Zhang, X, En, Y, Lu, G, Huang, Y, Ji, Z, Yang, H, Zhang, WD and Zhang, JF (2021) A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack. IEEE Journal of the Electron Devices Society, 9. pp. 539-544. ISSN 2168-6734

Mehedi, M, Tok, KH, Ye, Z, Zhang, JF, Ji, Z, Zhang, WD and Marsland, J (2021) On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude. IEEE Access. ISSN 2169-3536

Brown, J, Zhang, JF, Zhou, B, Mehedi, M, Freitas, P, Marsland, J and Ji, Z (2020) Random‑telegraph‑noise‑enabled true random number generator for hardware security. Scientific Reports, 10. ISSN 2045-2322

Mehedi, M, Tok, KH, Zhang, JF, Ji, Z, Ye, Z, Zhang, WD and Marsland, JS (2020) An assessment of the statistical distribution of Random Telegraph Noise Time Constants. IEEE Access, 8. pp. 182273-182282. ISSN 2169-3536

Gao, R, Shi, Y, He, Z, Chen, Y, En, Y, Huang, Y, Ji, Z, Zhang, JF, Zhang, WD, Zheng, X, Zhang, J and Liu, Y (2020) A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society, 8. 905 -910. ISSN 2168-6734

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Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Zhan, X, Shen, C, Ji, Z, Chen, J, Fang, H, Guo, F and Zhang, JF (2019) A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 40 (5). pp. 674-677. ISSN 0741-3106

Manut, A, Gao, R, Zhang, JF, Ji, Z, Mehedi, M, Vigar, D, Asenov, A and Kaczer, B (2019) Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd. IEEE Transactions on Electron Devices, 66 (3). pp. 1482-1488. ISSN 0018-9383

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

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Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J and Chalker, PR (2017) Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping. Applied Physics Letters, 111 (9). ISSN 0003-6951

Chai, Z, Ma, J, Zhang, WD, Govoreanu, B, Zhang, JF, Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices, 64 (10). pp. 4099-4105. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Potter, RJ, Guo, Y, Gibbon, JT, Dhanak, VR, Zhang, W, Zhang, JF, Robertson, J, Hall, S and Chalker, PR (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). ISSN 0003-6951

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Zhao, X, Zhang, JF, Liu, S, Zhao, C, Wang, C, Ren, X and Yang, Q (2016) Investigation on grain refinement mechanism of Ni-based coating with LaAlO3 by first-principles. Materials and Design, 110. pp. 644-652. ISSN 0264-1275

Ma, J, Zhang, WD, Zhang, JF, Benbakhti, B, Ji, Z, Mitard, J and Arimura, H (2016) A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3830-3836. ISSN 0018-9383

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Vigar, D, Asenov, A, Gerrer, L, Chandra, V, Aitken, R and Kaczer, B (2016) Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging. IEEE Transactions on Electron Devices, 63 (9). pp. 3642-3648. ISSN 0018-9383

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Gao, R, Ji, Z, Zhang, JF, Zhang, WD, Hatta, SFWM, Niblock, J, Bachmayr, P, Stauffer, L, Wright, K and Greer, S (2015) A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 (3). pp. 221-226. ISSN 0894-6507

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Groeseneken, G and Asenov, A (2014) Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (9). pp. 3081-3089. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Zheng, XF, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, PR (2014) Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE Transactions on Electron Devices, 61 (5). pp. 1307-1315. ISSN 0018-9383

Ma, J, Zhang, JF, Ji, Z, Benbakhti, B, Zhang, WD, Mitard, J, Kaczer, B, Groeseneken, G, Hall, S, Robertson, J and Chalker, P (2014) Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35 (2). pp. 160-162. ISSN 0741-3106

Conference or Workshop Item

Chai, Z, Zhang, W and Zhang, JF (2024) Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices. In: Proceedings of IEEE 15th International Conference on ASIC (ASICON) , 15 (2023). pp. 1-4. (IEEE 15th International Conference on ASIC, 24-27 October 2023, Nanjing, China).

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Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD (2020) Defect loss and its physical processes. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming).

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J (2020) Impact of RTN and Variability on RRAM-Based Neural Network. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China).

Duan, M, Zhang, JF, Ji, Z and Zhang, WD (2020) TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: 2020 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China).

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